Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2007-07-06
2009-10-06
Pham, Hoai V (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S172000, C438S022000, C257S103000, C257S194000, C257SE21121, C257SE21126
Reexamination Certificate
active
07598108
ABSTRACT:
A thermal expansion interface between silicon (Si) and gallium nitride (GaN) films using multiple buffer layers of aluminum compounds has been provided, along with an associated fabrication method. The method provides a (111) Si substrate and deposits a first layer of AlN overlying the substrate by heating the substrate to a relatively high temperature of 1000 to 1200° C. A second layer of AlN is deposited overlying the first layer of AlN at a lower temperature of 500 to 800° C. A third layer of AlN is deposited overlying the second layer of AlN by heating the substrate to the higher temperature range. Then, a grading Al1-XGaXN layer is formed overlying the third layer of AlN, where 0<X<1, followed by a fixed composition Al1-XGaXN layer overlying the first grading Al1-XGaXN layer. An epitaxial GaN layer can then be grown overlying the fixed composition Al1-XGaXN layer.
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Hsu Sheng Teng
Li Tingkai
Maa Jer-Shen
Tweet Douglas J.
Jones Eric W
Law Office of Gerald Maliszewski
Maliszewski Gerald
Pham Hoai V
Sharp Laboratories of America Inc.
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