Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-06-19
2007-06-19
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S094000, C257S095000, C257S622000, C257S623000, C257SE33005
Reexamination Certificate
active
10650122
ABSTRACT:
The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.
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Linthicum Kevin J.
Weeks T. Warren
Lee Eugene
Nitronex Corporation
Wolf Greenfield & Sacks P.C.
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