Gallium nitride light-emitting element and method of manufacturi

Details Gallium nitride light-emitting element and method of manufacturi Gallium nitride light-emitting element and method of manufacturi

1980-10-20

1983-08-02

Davie, James W.

357 16, 357 58, 357 61, 357 74, H01L 29161, H01L 33001, H01L 2912, H01L 29161

Patent

active

043969291

ABSTRACT:
The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.

REFERENCES:
patent: 3852796 (1974-12-01), Cuomo et al.
patent: 3922703 (1975-11-01), Pankove
patent: 4316208 (1982-02-01), Kobayashi et al.

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