Gallium nitride light-emitting device with ultra-high...

Details Gallium nitride light-emitting device with ultra-high... Gallium nitride light-emitting device with ultra-high...

2007-08-31

2011-11-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE33008, C438S022000

Reexamination Certificate

active

08053757

ABSTRACT:
One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.

REFERENCES:
patent: 6017774 (2000-01-01), Yuasa et al.
patent: 6091085 (2000-07-01), Lester
patent: 6881983 (2005-04-01), Narayan et al.
patent: 7436045 (2008-10-01), Kobayakawa et al.

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