Gallium nitride junction field-effect transistor

Details Gallium nitride junction field-effect transistor Gallium nitride junction field-effect transistor

1997-01-09

1999-02-02

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257256, 438186, H01L 2980

Patent

active

058669256

ABSTRACT:
An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

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