Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1991-12-20
1993-06-08
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 64, H01L 3300, H01L 2904
Patent
active
052182169
ABSTRACT:
A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.
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Akasaki Isamu
Amano Hiroshi
Hiramatsu Kazumasa
Manabe Katsuhide
Okazaki Nobuo
Larkins William D.
Meier Stephen D.
Nagoya University
Toyoda Gosei Co,., Ltd.
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