Gallium nitride group compound semiconductor laser diode

Details Gallium nitride group compound semiconductor laser diode Gallium nitride group compound semiconductor laser diode

1991-12-26

1993-09-21

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 43, 257 12, 257 13, H01S 319

Patent

active

052475336

ABSTRACT:
A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N (where 0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Al.sub.x' Ga.sub.1-x').sub.y' In.sub.1-y' N (where 0.ltoreq.x'.ltoreq.1, 0.ltoreq.y'.ltoreq.1, x=x' or x.noteq.x', and, y=y' or y.noteq.y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.

REFERENCES:
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4911102 (1990-03-01), Manabe et al.
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5146465 (1992-09-01), Khan et al.
H. Amano, et al., "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an A1N Buffer Layer", Japanese Journal of Applied Physics, vol. 29, No. 2, Feb., 1990 pp. 81-82.

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