Coherent light generators – Particular active media – Semiconductor
Patent
1997-03-03
1999-10-19
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
372 46, 257 22, 257 94, 257103, H01S 319
Patent
active
059700807
ABSTRACT:
The gallium nitride compound semiconductor light emitting element includes: a substrate; a first semiconductor multilayer structure including, at least, an active layer, a first cladding layer of a first conductivity type, and a second cladding layer of a second conductivity type, the first and second cladding layers sandwiching the active layer therebetween; a dry etching stop layer of the second conductivity type formed on the first semiconductor multilayer structure; and a second semiconductor multilayer structure formed on the dry etching stop layer.
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Bovernick Rodney
Conlin David G.
Sharp Kabushiki Kaisha
Song Yisun
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