Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-06-12
2007-06-12
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000, C257S096000, C257S101000, C257S103000, C257S548000
Reexamination Certificate
active
10474808
ABSTRACT:
In a gallium nitride semiconductor device comprising an active layer made of an n-type gallium nitride semiconductor that includes In and is doped with n-type impurity and a p-type cladding layer made of a p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity, a first cap layer, made of a gallium nitride semiconductor that includes n-type impurity of lower concentration than that of said active layer and p-type impurity of lower concentration than that of said p-type cladding layer, and a second cap layer made p-type gallium nitride semiconductor that includes Al and is doped with p-type impurity are stacked one on another between said active layer and said p-type cladding layer.
REFERENCES:
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5780876 (1998-07-01), Hata
patent: 5786603 (1998-07-01), Rennie et al.
patent: 5786606 (1998-07-01), Nisio et al.
patent: 5841802 (1998-11-01), Whiteley et al.
patent: 5929466 (1999-07-01), Ohba et al.
patent: 5945689 (1999-08-01), Koike et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 6153894 (2000-11-01), Udagawa
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6242761 (2001-06-01), Fujimoto et al.
patent: 6252894 (2001-06-01), Sasanuma et al.
patent: 6320893 (2001-11-01), Ueki
patent: 6388275 (2002-05-01), Kano
patent: 6423984 (2002-07-01), Kato et al.
patent: 6441393 (2002-08-01), Goetz et al.
patent: 6492660 (2002-12-01), Uchida
patent: 6534800 (2003-03-01), Ohbo et al.
patent: 6580736 (2003-06-01), Yoshie et al.
patent: 6586762 (2003-08-01), Kozaki
patent: 6657234 (2003-12-01), Tanizawa
patent: 6838693 (2005-01-01), Kozaki
patent: 2001/0020440 (2001-09-01), Morita
patent: 762 516 (1997-03-01), None
patent: 803 916 (1997-10-01), None
patent: 1 041 650 (2000-10-01), None
patent: 1 122 841 (2001-08-01), None
patent: 1 168 539 (2002-01-01), None
patent: 2323210 (1998-09-01), None
patent: 5-206513 (1993-08-01), None
patent: 8-111558 (1996-04-01), None
patent: 8-293623 (1996-11-01), None
patent: 8-293643 (1996-11-01), None
patent: 9-129926 (1997-05-01), None
patent: 9-36423 (1997-07-01), None
patent: 9-266326 (1997-10-01), None
patent: 9-293935 (1997-11-01), None
patent: 10-12923 (1998-01-01), None
patent: 10-12969 (1998-01-01), None
patent: 10-004210 (1998-01-01), None
patent: 10-012922 (1998-01-01), None
patent: 10-163523 (1998-06-01), None
patent: 10-242565 (1998-09-01), None
patent: 10-256601 (1998-09-01), None
patent: 11-54847 (1999-02-01), None
patent: 11-274644 (1999-10-01), None
patent: 11-298090 (1999-10-01), None
patent: 11-340559 (1999-12-01), None
patent: 2000-91630 (2000-03-01), None
patent: 2000-156544 (2000-06-01), None
patent: 2000-208814 (2000-07-01), None
patent: 2000-208875 (2000-07-01), None
patent: 2000-286447 (2000-10-01), None
patent: 2000-349377 (2000-12-01), None
patent: 2000-349398 (2000-12-01), None
patent: 2001-044570 (2001-02-01), None
patent: 2001-077413 (2001-03-01), None
patent: 2002-084038 (2002-02-01), None
patent: WO/0076004 (2000-12-01), None
Official Action dated Jun. 7, 2005, Japanese Patent Application No. 2002-109309.
Graybill David E.
Nichia Corporation
Nixon & Vanderhye P.C.
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