Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2006-09-12
2006-09-12
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S472000, C257S485000, C257S192000, C257S280000
Reexamination Certificate
active
07105907
ABSTRACT:
A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and a gate contact, respectively. The Schottky contact is a copper alloy, such as palladium copper, in which the content by weight of copper is 5%.
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Q.Z. Liu et al., “Thermally stable PtSi Schottky contact onn-GaN,” Appl. Phys. Lett. vol. 70, No. 10, Mar. 10, 1997, pp. 1275-1277.
Q.Z. Liu et al., “Ni and Ni silicide Schottky contacts onn-GaN,” J. App. Phys., vol. 84, No. 2, Jul. 15, 1998, pp. 881-886.
Metal Contacts to N-Type GaN, Journal of Electronic Materials, vol. 27, No. 4, 1998, pp. 255-260.
“Cu3Ge Schottky contacts on n-GaN” by Hsin et al., Journal of Materials Science: Materials in Electronics (Apr. 2002) vol. 13, No. 4, pp. 203-206.
Hirose Yutaka
Ikeda Yoshito
Inoue Kaoru
Nishii Katsunori
Loke Steven
Matsushita Electric - Industrial Co., Ltd.
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