Gallium nitride compound semiconductor device and method of...

Details Gallium nitride compound semiconductor device and method of... Gallium nitride compound semiconductor device and method of...

2006-05-23

2006-05-23

Tran, Mai-Huong (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257S081000, C257S084000, C257S088000, C257S077000, C257SE27121, C347S238000, C347S241000

Reexamination Certificate

active

07049160

ABSTRACT:
A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

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