Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-12-11
2007-12-11
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S431000, C257S436000, C257SE31021, C257SE31022, C257SE31067, C257SE31091
Reexamination Certificate
active
11041491
ABSTRACT:
A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the layers, on one hand, can achieve the desired band gaps so that the photo detector is highly responsive to ultraviolet lights having specific wavelengths. On the other hand, the layers have compatible lattice constants so that problems associated with excessive stress are avoided and high-quality epitaxial structure is obtained. The structure further contains a positive electrode, a light penetration contact layer, and an anti-reflective coating layer on top of the p-type contact layer, and a negative electrode on the n-type contact layer.
REFERENCES:
patent: 6921928 (2005-07-01), Sonobe
patent: 2005/0012113 (2005-01-01), Sheu et al.
Chien Fen-Ren
Tu Ru-Chin
Wen Tzu-Chi
Wu Liang-Wen
Yu Cheng-Tsang
Formosa Epitaxy Incorporation
Warren Matthew E.
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