Gallium nitride-based semiconductor light emitting device...

Details Gallium nitride-based semiconductor light emitting device... Gallium nitride-based semiconductor light emitting device...

2005-04-19

2005-04-19

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S604000, C438S685000

Reexamination Certificate

active

06881602

ABSTRACT:
According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+layer is disposed co-extensively on the n++layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+layer.

REFERENCES:
patent: 6524882 (2003-02-01), Takeya et al.
patent: 6555403 (2003-04-01), Domen et al.
patent: 6620238 (2003-09-01), Tsuda et al.

Affiliated with

Also associated with

Rating

Gallium nitride-based semiconductor light emitting device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium nitride-based semiconductor light emitting device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride-based semiconductor light emitting device... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3401236