Gallium nitride based semiconductor laser with an improved alumi

Details Gallium nitride based semiconductor laser with an improved alumi Gallium nitride based semiconductor laser with an improved alumi

1997-12-12

2000-02-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

060288779

ABSTRACT:
In accordance with the first present invention, a cladding layer is provided between a gallium nitride based semiconductor active region and a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride. The cladding layer includes at least one Al.sub.x Ga.sub.1-x N layer. An averaged value of the index "x" of aluminum of the above at least one Al.sub.x Ga.sub.1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of the above at least one Al.sub.x Ga.sub.1-x N layer is not less than 0.7 micrometers as well as the cladding layer has an averaged refractive index which is lower than the refractive index of gallium nitride.

REFERENCES:
patent: 5617438 (1997-04-01), Hatano et al.
patent: 5866440 (1999-02-01), Hata
Shuji Nakamura et al., "Ridge-geometry InGaN multi-quantum-well-structure laser diodes", pp. 1477-1479, American Institute of Physics, Appl. Phys. Lett., vol. 69, No. 10, Sep. 2, 1996.

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