Gallium nitride based semiconductor laser and image exposure...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S046010

Reexamination Certificate

active

07113530

ABSTRACT:
In order to obtain a visually high quality image with excellent sharpness using a silver halide photosensitive material, it is necessary to reduce the ratio of EL light in the light output from a GaN based laser diode to 20% or less. For example, when the light intensity measured on a sheet of photosensitive paper is 0.05 mW, the thickness of a waveguide is 3 nm and the width of the waveguide is 3 μm, this condition is satisfied with a length of a resonator being 1 mm or less. In other words, a waveguide width W1and a resonator length L are set such that the product of the waveguide width W1and the resonator length L (W1·L) becomes 0.003 mm2or less. This reduces the output ratio of the EL light, and a high quality image with excellent sharpness can be obtained when a silver halide photosensitive material is exposed.

REFERENCES:
patent: 4603420 (1986-07-01), Nishizawa et al.
patent: 6219366 (2001-04-01), Furushima
patent: 6614720 (2003-09-01), Ogata et al.
patent: 6740869 (2004-05-01), Okino et al.
patent: 6850547 (2005-02-01), Goto
patent: 2003/0052316 (2003-03-01), Nido et al.

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