Gallium-nitride based multi-quantum well light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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C257S096000, C257S015000, C257S018000

Reexamination Certificate

active

07042019

ABSTRACT:
A structure for the n-type contact layer in the GaN-based MQW LEDs is provided. Instead of using Si-doped GaN as commonly found in conventional GaN-based MQW LEDs, the n-type contact layer provided by the present invention achieves high doping density (>1×1019cm−3) and low resistivity through a superlattice structure combining two types of materials, AlmInnGa1-m-nN and AlpInqGa1-p-qN (0≦m,n<1, 0<p,q<1, p+q≦1, m<p), each having its specific composition and doping density. In addition, by controlling the composition of Al, In, and Ga in the two materials, the n-type contact layer would have a compatible lattice constant with the substrate and the epitaxial structure of the GaN-based MQW LEDs. This n-type contact layer, therefore, would not chap from the heavy Si doping, have a superior quality, and reduce the difficulties of forming n-type ohmic contact electrode. In turn, the GaN-based MQW LEDs would require a lower operation voltage.

REFERENCES:
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 2003/0127658 (2003-07-01), Sheu et al.

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