Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-02-20
2007-02-20
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S085000, C257S194000
Reexamination Certificate
active
10964350
ABSTRACT:
An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). This anti-ESD thin layer greatly improves the GaN-based LEDs' reverse withstanding voltage and resistivity to ESD, which in turn extends the GaN-based LEDs' operation life significantly.
REFERENCES:
patent: 2005/0263779 (2005-12-01), Hon et al.
patent: 2006/0076574 (2006-04-01), Wu et al.
Chien Fen-Ren
Tu Ru-Chin
Wen Tzu-Chi
Wu Liang-Wen
Yu Cheng-Tsang
Doan Theresa T.
Formosa Epitaxy Incorporation
LandOfFree
Gallium-nitride based light-emitting diode structure with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium-nitride based light-emitting diode structure with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium-nitride based light-emitting diode structure with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3840703