Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-08-08
2006-08-08
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S013000, C257S015000, C257S097000, C257S102000
Reexamination Certificate
active
07087924
ABSTRACT:
Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact layer of better transmittance efficiency, so as to significantly raise the illuminance of this light emitting diode and its light emission efficiency. The multi-quantum-well light emitting diode has a structure including: substrate, buffer layer, n-type gallium-nitride layer, active light-emitting-layer, p-type cladding layer, p-type contact layer, barrier buffer layer, transparent contact layer, and the n-type electrode layer.
REFERENCES:
patent: 6849864 (2005-02-01), Nagahama et al.
Chien Fen-Ren
Tu Ru-Chin
Wen Tzu-Chi
Wu Liang-Wen
Yu Cheng-Tsang
Formosa Epitaxy Incorporation
Fourson George
Maldonado Julio J.
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