Gallium-nitride based light emitting diode structure and...

Details Gallium-nitride based light emitting diode structure and... Gallium-nitride based light emitting diode structure and...

2008-01-15

2008-01-15

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S046000

Reexamination Certificate

active

07319045

ABSTRACT:
A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top of the first contact spreading layer. The p-type transparent metallic conductive layer composed of the three contact spreading metallic layers, after undergoing an alloying process within an oxygenic or nitrogenous environment under a high temperature, would have a superior conductivity. The p-type transparent metallic conductive layer could enhance the lateral contact uniformity between the p-type metallic electrode and the p-type ohmic contact layer, so as to avoid the localized light emission resulted from the uneven distribution of the second contact spreading metallic layer within the third contact spreading metallic layer. The GaN-based LED's working voltage and external quantum efficiency are also significantly improved.

REFERENCES:
patent: 6072197 (2000-06-01), Horino et al.
patent: 7053420 (2006-05-01), Tadatomo et al.
patent: 7067838 (2006-06-01), Sato et al.
patent: 7183583 (2007-02-01), Lai et al.
patent: 2002/0190263 (2002-12-01), Hata et al.
patent: 2004/0113166 (2004-06-01), Tadatomo et al.
patent: 2006/0175600 (2006-08-01), Sato et al.

Affiliated with

Also associated with

Rating

Gallium-nitride based light emitting diode structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gallium-nitride based light emitting diode structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium-nitride based light emitting diode structure and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2798774