Gallium-nitride based light-emitting diode epitaxial structure

Details Gallium-nitride based light-emitting diode epitaxial structure Gallium-nitride based light-emitting diode epitaxial structure

2005-12-27

2005-12-27

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S015000, C257S103000, C257S190000

Reexamination Certificate

active

06979835

ABSTRACT:
An epitaxial structure for the GaN-based LED is provided. The GaN-based LED uses a substrate usually made of sapphire or silicon-carbide (SiC). On top of the substrate, the GaN-based LED contains an n-type contact layer made of an n-type GaN-based material. On top of the n-type contact layer, the GaN-based LED further contains a lower barrier layer covering part of the surface of the n-type contact layer. A negative electrode is also on top of and has an ohmic contact with the n-type contact layer in an area not covered by the lower barrier layer. On top of the lower barrier layer, the GaN-based LED then further contains an active layer made of aluminum-gallium-indium-nitride, an upper barrier layer, a p-type contact layer made of a magnesium (Mg)-doped GaN material, and a positive electrode having an ohmic contact with the p-type contact layer, sequentially stacked in this order from bottom to top. Within this structure, each of the barrier layers further contains, from bottom to top, a first AlGaInN layer, a SiN layer, and a second AlGaInN layer.

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