Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2009-03-05
2010-11-30
Parker, Kenneth A (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257S014000, C257S015000, C257SE33008, C257SE33023, C257SE33025, C257SE33026, C257SE33027, C257SE33028, C257SE33030, C257SE33031, C257SE33032, C257SE33033, C257SE33034, C257SE33037, C438S046000
Reexamination Certificate
active
07842531
ABSTRACT:
A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.
REFERENCES:
patent: 4986635 (1991-01-01), Spry
patent: 6625187 (2003-09-01), Ikoma et al.
patent: 6958497 (2005-10-01), Emerson et al.
patent: 7378680 (2008-05-01), Johnson et al.
patent: 7425732 (2008-09-01), Ueda et al.
patent: 2002/0054617 (2002-05-01), Tsuda et al.
patent: 2004/0061102 (2004-04-01), Tansu et al.
patent: 2004/0081214 (2004-04-01), Mawst et al.
patent: 2005/0170167 (2005-08-01), Kim et al.
patent: 2005/0173694 (2005-08-01), Mawst et al.
patent: 2005/0211993 (2005-09-01), Sano et al.
patent: 2006/0017061 (2006-01-01), Sakamoto et al.
patent: 2007/0248135 (2007-10-01), Mawst et al.
patent: 2008/0099755 (2008-05-01), Tansu et al.
patent: 2008/0144685 (2008-06-01), Tansu et al.
patent: 2004030032 (2004-04-01), None
patent: 2008133756 (2008-11-01), None
patent: 2004038872 (2009-03-01), None
International Search Report issued in International (PCT) Patent Application No. PCT/US2007/088778.
Arif Ronald A.
Ee Yik Khoon
Tansu Nelson
Kim Jay C
Lehigh University
Parker Kenneth A
Saul Ewing LLP
LandOfFree
Gallium nitride-based device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium nitride-based device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride-based device and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4203372