Gallium nitride-based compound semiconductor light-emitting...

Details Gallium nitride-based compound semiconductor light-emitting... Gallium nitride-based compound semiconductor light-emitting...

2006-09-05

2010-12-07

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S094000

Reexamination Certificate

active

07847314

ABSTRACT:
It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.

REFERENCES:
patent: 6365923 (2002-04-01), Kamei
patent: 6479313 (2002-11-01), Ye et al.
patent: 2002/0000563 (2002-01-01), Udagawa
patent: 2004/0113156 (2004-06-01), Tamura et al.
patent: 2001-102623 (2001-04-01), None
patent: 2004-179365 (2004-06-01), None
“Investigation of indium-tin-oxide ohmic contact to p-GaN and its application to high-brightness GaN-based light-emitting diodes”, Kow-Ming Chang, et al., Solid-State Electronics 49, (2005) 1381-1386.
“Hydrogen Dissociation from Mg-doped GaN”, Yoshinori Nakagawa, et al., Japanese Journal of Applied Physics, vol. 43, No. 1, 2004, pp. 23-29.

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