Gallium nitride-based compound semiconductor light-emitting...

Details Gallium nitride-based compound semiconductor light-emitting... Gallium nitride-based compound semiconductor light-emitting...

2004-12-08

2008-11-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S676000, C438S029000, C257SE21053

Reexamination Certificate

active

07452740

ABSTRACT:
A gallium nitride-based compound semiconductor light-emitting device which includes an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively; wherein the negative electrode includes a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of Cr or a Cr alloy and formed through sputtering.

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English machine translation of JP 2003110140 A, Shinya, Sonobe., Nitride Semiconductor Light Emiting Element

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