Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-07-22
2008-07-22
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
Reexamination Certificate
active
10592759
ABSTRACT:
The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.
REFERENCES:
patent: 7056755 (2006-06-01), Kamei et al.
patent: 2001/0042860 (2001-11-01), Hata et al.
patent: 2002/0053676 (2002-05-01), Kozaki
patent: 2003/0205736 (2003-11-01), Kozaki
patent: 2002-84038 (2002-03-01), None
A. Adesida, et al, “Reactive Ion Etching of Gallium Nitride in Silicon Tetrachloride Plasmsa)”, Apply. Phys. Lett., vol. 63, No. 20, 1993, pp. 2777-2779.
Muraki Noritaka
Ohno Yasushi
Watanabe Munetaka
Ha Nathan W
Show a Denko K.K.
Sughrue & Mion, PLLC
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