Gallium nitride-based compound semiconductor light-emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257S103000, C257S744000, C257S745000, C257SE33063

Reexamination Certificate

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10572680

ABSTRACT:
An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance.The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer in a gallium nitride-based compound semiconductor light-emitting device and which is capable of providing ohmic contact, and a second layer which is in contact with a part of a surface of said p-contact layer, wherein the first layer comprises a metal, or an alloy of two or more metals, selected from a first group consisting of Au, Pt, Pd, Ni, Co, and Rh, and the second layer comprises an oxide of at least one metal selected from a second group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.

REFERENCES:
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patent: 2003/0010994 (2003-01-01), Chen et al.
patent: 2003/0164503 (2003-09-01), Chen
patent: 10-135515 (1998-05-01), None
patent: 10-209500 (1998-08-01), None
patent: 10-308534 (1998-11-01), None
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J. Narayan, et al, “Formation of Epitaxial Au/Ni/Au Ohmic Contacts top-GaN”, Applied Physics Letters, vol. 81, No. 21, Nov. 18, 2002, pp. 3978-3980.
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D. Mistele, et al, “Investigation of Ni/Au Contacts onp-GaN Annealed in Different Atmospheres”, Journal of Crystal Growth, vol. 230, No. ¾, 2001, pp. 564-568.
B. Liu, et al, “Effects of a Ni Cap Layer on Transparent Ni/Au Ohmic Contacts to p-GaN”, J. Vac. Sci Technol. B, vol. 20, No. 4, Jul./Aug. 2002, pp. 1394-1401.
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