Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-01-25
2011-01-25
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S046000, C438S047000, C257S013000, C257S079000, C257SE33025, C257SE33065
Reexamination Certificate
active
07875474
ABSTRACT:
The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer13, a light emitting layer14, and a p-type semiconductor layer15, sequentially stacked on a substrate11; a light-permeable positive electrode16stacked on the p-type semiconductor layer15; a positive electrode bonding pad17provided on the light-permeable positive electrode16; and a negative electrode bonding pad provided18on the n-type semiconductor layer13, wherein a disordered uneven surface formed at least on a part of the surface15aof the p-type semiconductor layer15.
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Muraki Noritaka
Osawa Hiroshi
Shinohara Hironao
Lee Hsien-Ming
Show A Denko K.K.
Sughrue & Mion, PLLC
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