Gallium nitride-based compound semiconductor laser and method of

Details Gallium nitride-based compound semiconductor laser and method of Gallium nitride-based compound semiconductor laser and method of

1997-07-25

1999-10-12

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059663960

ABSTRACT:
A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

REFERENCES:
patent: 4972238 (1990-11-01), Tanaka
patent: 5321713 (1994-06-01), Khan et al.
patent: 5400355 (1995-03-01), Ishida
patent: 5547899 (1996-08-01), Fujii et al.
patent: 5617438 (1997-04-01), Hatano et al.
patent: 5701322 (1997-12-01), Nagai
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5777350 (1998-07-01), Nakamura et al.

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