Gallium-nitride-based compound semiconductor device

Details Gallium-nitride-based compound semiconductor device Gallium-nitride-based compound semiconductor device

2005-07-15

2009-08-04

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000

Reexamination Certificate

active

07569870

ABSTRACT:
A semiconductor device having nitride semiconductor layers has a buffer layer (2) in the form of alternations of a first sublayer (8) of AlN and a second layer (9) of GaN with interposition of a third layer (10) of p-type GaN therebetween. On this buffer layer there is grown a main semiconductor region (3) having nitride semiconductor layers for providing a high-electron-mobility transistor or the like. From 0.5 to 50.0 nanometers thick, the third sublayers (10) of the buffer layer restrict the generation of two-dimensional electron gas and so prevent the buffer layer from becoming unnecessarily low in resistance.

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Cordier, Y. et al., “AIGaN/GaN HEMTs on Resistive Si(111) Substrate Grown by Gas-Source MBE”,Electronic Letters, 2002, 38(2), 91-92.

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