Gallium-nitride-based compound semiconductor device

Details Gallium-nitride-based compound semiconductor device Gallium-nitride-based compound semiconductor device

2006-02-28

2006-02-28

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S190000, C257S097000, C372S045013

Reexamination Certificate

active

07005685

ABSTRACT:
A GaN-based compound semiconductor device formed by sequentially forming, on a substrate, a GaN-based buffer layer and a GaN-based compound semiconductor layer. AlxGa1-xN1-yPyor AlxGa1-xN1-yAsy(0≦x≦1, 0<y<1) is used as the GaN-based buffer layer. N in AlxGa1-xN is partially substituted by P or As, whereby a buffer layer is grown at a high temperature. Thus, a difference in processing temperature between the process for growing a buffer layer and processes before and after the process is reduced. The GaN-based compound semiconductor layer formed on the buffer layer comprises a GaN-based layer, an n-type clad layer, a light-emitting layer, and a p-type clad layer. A multiple quantum well (MQW) layer formed from GaNP or GaNAs and GaN is inserted between the GaN-based layers, thereby reducing a dislocation density of the GaN-based layers.

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