Gallium arsenide single crystal solar cell structure and method

Details Gallium arsenide single crystal solar cell structure and method Gallium arsenide single crystal solar cell structure and method

1980-09-26

1983-01-25

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

29572, 136261, 148 15, 148175, 357 30, H01L 3106, H01L 3118

Patent

active

043705103

ABSTRACT:
A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p
or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

REFERENCES:
patent: 3935040 (1976-01-01), Mason
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4227941 (1980-10-01), Bozler et al.
J. C. C. Fan et al., "GaAs Shallow-Homojunction Solar Cells", Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 1102-1105.
Y. C. M. Yeh et al., "Epitaxial & Polycrystalline GaAs Solar Cells Using OM-CVD Techniques", Conf. Record, 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 1338-1342.
R. J. Stirn et al., "Single Crystal & Polycrystalline GaAs Solar Cells Using AMOS Technology", Conf. Record, 12th IEEE Photovoltaic Specialists Conf. (1976), pp. 883-892.
A. R. Kirkpatrick et al., "A Nonconventional Approach To Thin Film Fabrication", Conf. Record, 13th IEEE Photovoltaic Specialists Conf. (1978), pp. 1342-1346.

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