Gallium arsenide power monolithic microwave integrated circuit

Details Gallium arsenide power monolithic microwave integrated circuit Gallium arsenide power monolithic microwave integrated circuit

1988-02-29

1989-12-26

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330302, 330311, H03F 316

Patent

active

048900699

ABSTRACT:
A gallium arsenide monolithic microwave integrated circuit amplifier comprising a first stage having a common gate field effect transistor to provide matching of the input impedance, a second stage having a common source field effect transistor to provide class A gain, and a third stage having a common source open drain field effect transistor to provide class B gain for the amplifier. This monolithic integrated circuit amplifier provides a gain of greater than 25 decibels over a frequency band of 400 Hz-1.5 GHz.

REFERENCES:
patent: 4390851 (1983-06-01), Higgins et al.

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