Gallium arsenide phosphide top solar cell

Details Gallium arsenide phosphide top solar cell Gallium arsenide phosphide top solar cell

1984-04-30

1986-04-15

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136262, 357 30, H01L 3106

Patent

active

045829527

ABSTRACT:
An improved tandem solar cell includes a gallium arsenide phosphide top solar cell and silicon bottom solar cell. The gallium arsenide phosphide solar cell is fabricated on a transparent gallium phosphide substrate and either placed in series with the silicon solar cell for a two terminal device or wired separately for a four terminal device. The top solar cell should have an energy gap between 1.77 and 2.09 eV for optimum energy conversion efficiency. A compositionally graded transition layer between the gallium phosphide substrate and the active semiconductor layers reduces dislocations in the active region. A gallium phosphide cap layer over the gallium arsenide phosphide solar cell reduces surface recombination losses.

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D. L. Barton et al., "Solar Cells Based on GaP.sub.x As.sub.1-x Compounds", Conf. Record, 13th IEEE Photovoltaic Specialists Conf. (1978), pp. 972-977.
J. C. C. Fan et al., "Optimal Design of High Efficiency Tandem Cells", Proc. 16th IEEE Photovoltaic Specialists Conf. (1982), pp. 692-701.
J. C. C. Fan et al., "High Efficiency Crystalline Tandem Cells", Proc. SPIE, vol. 407, pp. 73-87 (1983).
G. Sassi, "Theoretical Analysis of Solar Cells Based Upon Graded Band Gap Structures", J. Appl. Phys., vol. 54, pp. 5421-5426 (1983).
R. L. Moon et al., "Continuous Compositional Grading by LPE in Al-Ga-V Quaternary Alloys", Inst. Phys. Conf. Ser. No. 45, Chap. I, pp. 78-88.

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