Gallium arsenide on gallium indium arsenide Schottky barrier dev

Details Gallium arsenide on gallium indium arsenide Schottky barrier dev Gallium arsenide on gallium indium arsenide Schottky barrier dev

1985-06-14

1988-05-17

James, Andrew J.

357 15, 357 16, H01L 29201, H01L 2956, H01L 2980

Patent

active

047454474

ABSTRACT:
Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.

REFERENCES:
patent: 3218205 (1965-11-01), Ruehrwein
patent: 4173764 (1979-11-01), de Cremoux
patent: 4360246 (1982-11-01), Figueroa et al.
patent: 4455564 (1984-06-01), Delagebeaudeuf
Zipperian et al, "An In.sub.0.2 Ga.sub.0.8 As/GaAs . . . Transistor", IEDM 1983, pp. 696-699, Wash., D.C.
Fukuzawa et al, "Monolithic . . . Transistor", Appl. Phys. Lett., 36 (3), 1 Feb. 1980, pp. 181-183.
Ohno et al, "Double Heterostructure . . . MBE", IEEE Elec. Dev. Lett., vol. EDL-1, No. 8, Aug. 1980.

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