Patent
1985-06-14
1988-05-17
James, Andrew J.
357 15, 357 16, H01L 29201, H01L 2956, H01L 2980
Patent
active
047454474
ABSTRACT:
Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.
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Zipperian et al, "An In.sub.0.2 Ga.sub.0.8 As/GaAs . . . Transistor", IEDM 1983, pp. 696-699, Wash., D.C.
Fukuzawa et al, "Monolithic . . . Transistor", Appl. Phys. Lett., 36 (3), 1 Feb. 1980, pp. 181-183.
Ohno et al, "Double Heterostructure . . . MBE", IEEE Elec. Dev. Lett., vol. EDL-1, No. 8, Aug. 1980.
Chen Chung Y.
Cho Alfred Y.
Chu Sung-Nee G.
American Telephone and Telegraph Company AT&T Bell Laboratories
Jackson, Jr. Jerome
James Andrew J.
Nilsen Walter G.
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