Gallium arsenide MIS integrated circuits

Details Gallium arsenide MIS integrated circuits Gallium arsenide MIS integrated circuits

1981-06-09

1984-03-20

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 307291, 307304, 357 23, H03K 17687, H03K 3356, H03K 1900

Patent

active

044383517

ABSTRACT:
A technique to utilize GaAs insulated gate field effect transistors (IGFETs) with large surface state densities in digital integrated circuits including latches is described. In this technique, the threshold voltage is electrically set to obtain enhancement mode characteristics of the IGFETs. Due to changes in surface charge with time, these circuits will not function at very low frequencies, but are very useful at gigahertz frequencies.

REFERENCES:
patent: 3996656 (1976-12-01), Cook, Jr.
patent: 4119993 (1978-10-01), Hartnagel et al.
patent: 4252580 (1981-02-01), Messick
patent: 4291327 (1981-09-01), Tsang
patent: 4375677 (1983-03-01), Schuermeyer
Yokoyama et al., "Low-Power, High-Speed Integrated Logic with GaAs MOSFET", 11th Conf., (1979 International) on Solid State Devices, Tokyo, 1979.
Kawakami et al., "Fabrication and Performance of InP. MISFET", Conf., International Electron Devices Meeting, Washington, D.C. Dec. 8-10, 1980.

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