Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1982-08-24
1984-05-22
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 13, 357 15, 357 22, 357 43, 357 58, 357 92, 307458, 307302, H01L 2704, H03K 19091
Patent
active
044504683
ABSTRACT:
A gallium arsenide semiconductor integrated circuit having a driver transistor constructed as a normally-configured bipolar mode static induction transistor having an n.sup.+ source region provided in a main or outer surface thereof and having an n.sup.+ buried region which serves as a drain region thereof. A bipolar, an insulated gate field-effect transistor or a resistor may be employed as a load for the driver transistor. Both the driver transistor and the load are formed on a semi-insulating substrate, preferably a p-type high resistivity material. Schottky diodes may be provided at the output terminals of the driver transistor so that wired-OR and wired-NOR logic functions may be readily implemented.
REFERENCES:
patent: Re29971 (1979-04-01), Nishizawa et al.
patent: 4032962 (1977-06-01), Balyoz
patent: 4216490 (1980-08-01), Ohki
patent: 4234803 (1980-11-01), Nonaka
patent: 4317127 (1982-02-01), Nishizawa
Japan J. Appl. Physics, vol. 16, Suppl. 16-1, pp. 151-154, (1977), (357-392).
IEEE ISSCC, Dig. Tech. Papers, pp. 168-169, (Feb. 1975), Peltier, "C3L".
Nishizawa Jun-ichi
Ohmi Tadahiro
Handotai Kenkyu Shinkokai
Larkins William D.
LandOfFree
Gallium arsenide ISL gate with punched-through bipolar driver tr does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium arsenide ISL gate with punched-through bipolar driver tr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium arsenide ISL gate with punched-through bipolar driver tr will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1481384