Gallium arsenide infrared light emitting diode

Details Gallium arsenide infrared light emitting diode Gallium arsenide infrared light emitting diode

1975-06-20

1977-02-15

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 18, 357 63, 357 64, 148171, H01L 3300

Patent

active

040084850

ABSTRACT:
A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S.

REFERENCES:
patent: 3600240 (1971-08-01), Rupprecht
patent: 3660734 (1972-05-01), Sida
patent: 3666567 (1972-05-01), Hunsperger
patent: 3676228 (1972-07-01), Sokuri
patent: 3715245 (1973-02-01), Barnett
patent: 3941624 (1976-03-01), Cho
Sato et al., Nat. Tech. Report, vol. 18, No. 3 June 1972, pp. 249-258.

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