Gallium arsenide-germanium heteroface junction device

Details Gallium arsenide-germanium heteroface junction device Gallium arsenide-germanium heteroface junction device

1981-07-08

1983-05-24

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136261, 136262, 148191, 357 16, 357 30, 357 63, H01L 3106

Patent

active

043851983

ABSTRACT:
Doping with one of the Group Ia elements Li, Na or K near the heteroface junction produces P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the Group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge.

REFERENCES:
patent: 4128733 (1978-12-01), Fraas et al.
patent: 4191593 (1980-03-01), Cacheux

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