Gallium arsenide burrus FET structure for optical detection

Details Gallium arsenide burrus FET structure for optical detection Gallium arsenide burrus FET structure for optical detection

1980-03-24

1982-08-24

Edlow, Martin H.

357 16, 357 22, 357 55, 357 4, H01L 2714, H01L 2980, H01L 3110

Patent

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043463940

ABSTRACT:
A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provides for efficient coupling of optical radiation into the active region through an opening in a semi-insulating substrate used to support the device. A buffer layer between the active region and the substrate prevents leakage current to the substrate, permits a larger illumination window for improved optical coupling and provides mechanical support for the FET detector. GaAs photodetectors are also provided by eliminating the gate electrode.

REFERENCES:
patent: 3651423 (1972-03-01), Sewell
patent: 3662289 (1972-05-01), Dienst
patent: 4152713 (1979-05-01), Copeland
patent: 4157556 (1979-06-01), Decker
patent: 4176367 (1979-11-01), Uematsu
patent: 4212020 (1980-07-01), Yariv
J. Pan, `GaAs MESFET for High Speed Optical Detection`, 22nd SPIE International Tech. Symposium, San Diego, Cal. 28-31, Aug. 1978.

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