Gallium arsenide/aluminum gallium arsenide photocell including e

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136262, 257434, 257459, 257773, 437 2, 437 5, 437184, H01L 3104, H01L 3118

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active

053305850

ABSTRACT:
A photocell (40) includes a photovoltaic or otherwise photosensitive layer structure (44) on which a passivation or window layer (52) of an environmentally sensitive material such as aluminum gallium arsenide (AlGaAs) and an antireflection (AR) coating (54) are formed. An electrically conductive cap layer (60) delineated in a front contact grid configuration sealingly extends through the AR coating (54) to the window layer (52). An ohmic metal contact (64) is evaporated over and seals the cap layer (60) and the contiguous areas of the AR coating (54). The contact grid interface at which the cap layer (60) contacts the window layer (52) is sealed by the AR coating (54) and the contact (64). The photocell (40) is fabricated by forming, delineating and etching the cap layer (60), forming the AR coating (54) and then forming the contact (64) by evaporation of metal.

REFERENCES:
patent: 4725559 (1988-02-01), Fraas
patent: 5075763 (1991-12-01), Spitzer et al.
S. P. Tobin et al., Solar Cells, vol. 24, pp. 103-115 (May/Jun. 1988).
H. F. MacMillan et al., Conference Record, 20th IEEE Photovoltaic Specialists Conf., Sep. 1988, pp. 462-468.
M. R. Melloch et al., Conference Record, 21st IEEE Photovoltaic Specialists Conf., May 1990, pp. 163-167.
26% Efficient Magnesium-Doped AlGaAs/GaAs Concentrator Solar Cells, by H. Hamaker et al., Proceedings of 18th Photovoltaic Specialists Conference, IEEE 1985, pp. 327-331.
J. C. Chen et al., "Effects of Metalorganic Chemical Vapor Deposition Growth Conditions on the GaAs/Ge Solar Cell Properties", Applied Physics Letters, vol. 58, No. 20, May 20, 1991, New York, pp. 2282-2284.

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