Gallium antimonide field-effect transistor

Details Gallium antimonide field-effect transistor Gallium antimonide field-effect transistor

1991-03-15

1992-04-21

Wojciechowicz, Edward J.

357 4, 357 16, 357 42, H01L 2978

Patent

active

051073145

ABSTRACT:
A complementary MISFET uses gallium antimonide as the active material to utilize the high mobilities of both holes and electrons in such material. To avoid interfacial states at the gate interface, the gate insulator is an epitaxial composite layer formed by an appropriate superlattice of which the portion adjacent the channel region is free of intentional doping. The superlattice may comprise, for example, alternating layers of aluminum antimonide and aluminum arsenide or of aluminum antimonide and gallium arsenide.

REFERENCES:
patent: 4866491 (1989-09-01), Solomon et al.
Capasso et al.--Appl. Phys. Lett.--vol. 51, No. 7, Aug. 17, 1987, pp. 526-527.
Longenbach et al.--IEEE Trans. on Electron Devices--vol. 37, No. 10, Oct. 1990.
"A Complementary Heterostructure Field Effect Transistor Technology Based on InAs/AlSb/GaSb/"--by K. F. Longenbach et al.--IEEE Transactions on Electron Devices, vol. 37, No. 10, Oct. 1990 0018-9383/90/1000-226501.00 1990 IEEE.
"p-Channel Modulation-Doped Field-Effect Transistors Based on AlSb0.9As0.1/GaSb"--by L. F. Luo et al.--IEEE Electron Device Letters, vol. 11, No. 12, Dec. 1990--0741-3106/90/1200-0567m, 1990 IEEE.

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