Gallium aluminum arsenide integrated circuit structure using ger

Details Gallium aluminum arsenide integrated circuit structure using ger Gallium aluminum arsenide integrated circuit structure using ger

1982-06-30

1984-11-13

Edlow, Martin H.

357 17, 357 30, H01L 29161

Patent

active

044829060

ABSTRACT:
An integrated circuit structure made up of a monocrystalline substrate on which there is an epitaxial intermediate layer of GaAlAs or GaAlAs and Ge with the Ge adjacent to the substrate. The structure is equipped with a single or a combined device epitaxial layer involving GaAs and GaAlAs. The intermediate GaAlAs layer permits substrate, circuit and optical signal application flexibility.

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Thorsen et al., "Heteroepitaxial GaAs on Aluminum Oxide: Electrical Properties of Undoped Films," Journal of Applied Physics, vol. 42, No. 6, pp. 2519-2527.
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-Al.sub.x Ga.sub.1-x As Heterojunctions", by Takashi Mimura et al.

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