Gallate single crystal, process for producing the same,...

Details Gallate single crystal, process for producing the same,... Gallate single crystal, process for producing the same,...

2011-05-24

2011-05-24

Koslow, C. Melissa (Department: 1734)

Compositions

Piezoelectric

C117S942000, C310S311000, C310S329000, C310S319000

Reexamination Certificate

active

07947192

ABSTRACT:
A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400 DEG C, having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of RE3Ga5−xAlxSiO14(wherein RE represents a rare earth, and 0<X<5), RE3Ta0.5Ga5.5−xAlxO14(wherein RE represents a rare earth, and 0<X<5.5) and RE3Nb0.5Ga5.5−xAlxO14(wherein RE represents a rare earth, and 0<x<5.5) and by exhibiting a 100 to 600° C. resistivity change of ≦104. The process for producing the same is characterized by growing a single crystal from a solution in an atmosphere of inert gas containing an oxidative gas and thereafter cooling the single crystal in an inert gas whose oxidative gas molar fraction (z) is lower than in the above growing step.

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Takeda et al. “Effect of aluminum substitution in La3Ga5SiO14 crystals on their structure and piezoelectricity”, App. Phys. Lett. vol. 79, No. 25, Dec. 2001, pp. 4201-4203.
Takeda et al. “Structure and Piezoelectric Propeties of Al-substituted Langasite (La3Ga5-xAlxSiO14) Crystals”, Key Engineering Materials, vol. 216, Jan. 2002, pp. 43-46.
Takeda Hiroaki et al: “Effect of aluminum substitution in La3Ga5SiO14 crystals on their structure and piezoelectricity”, Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US LNKD-DOI:10.1063/1.1426274, vol. 79, No. 25, Dec. 17, 2001, pp. 4201-4203, XP012029697, ISSN: 0003-6951.
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