Metal working – Plural diverse manufacturing apparatus including means for... – Common reciprocating support for spaced tools
Patent
1982-03-29
1984-09-04
Ozaki, G.
Metal working
Plural diverse manufacturing apparatus including means for...
Common reciprocating support for spaced tools
29576E, 29574, 29580, 148171, 148174, 156626, 156649, H01L 21208
Patent
active
044688504
ABSTRACT:
A method and apparatus is described wherein a buried double heterostructure laser device is formed utilizing epitaxial layers of quaternary III-V alloys of gallium indium arsenide phosphide and wherein the buried layer is formed by first etching the p-type top layer of the structure down to the quaternary active layer forming a mesa. A second etchant is then provided which preferentially etches the active layer. This etchant is used to undercut the top layer by removing the active layer on both sides of the top mesa surface providing a narrow strip of active layer underneath the undercut mesa. The undercut is then filled in by a heat treatment process which results in migration or transport of the binary top layer and binary bottom layer to fill in the undercut, leaving the active layer buried in the binary material. In an alternate embodiment of the invention, the two-step etching process plus the transport phenomena is utilized to form the mirror surface of a laser device. The device may include a support mesa and control mesa structure and may also be used to fabricate optical waveguide structures.
REFERENCES:
patent: 3359143 (1967-12-01), Heywang et al.
patent: 3716405 (1973-02-01), Lim
patent: 3982261 (1976-09-01), Antypas
patent: 4276098 (1981-06-01), Nelson et al.
patent: 4287485 (1981-09-01), Hsieh
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4372791 (1983-02-01), Hsieh
"Heterostructure Injection Lasers" by Morton B. Panish, Proceedings of the IEEE, vol. 64, No. 10, Oct. 1976; pp. 1512-1540.
"Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Heterostructure Lasers" by Hirao et al.; J. Appl. Phys. 51 (8), Aug., 1980, pp. 4539 and 4540.
"InGaAsP Planar Buried Heterostructure Laser Diode (PBH-LD) with Very Low Threshold Current" by Mito et al., Electronic Letters, vol. 18, No. 1, Jan. 7th, 1982.
"Groove GaInAsP Laser on Semi-Insulating InP" by Yu et al., Electronics Letters, vol. 17, No. 21, Oct. 15th, 1981, pp. 790-792.
"InGaAsP/InP Buried Crescent Laser Emitting at 1.3 .mu.m with Very Low Threshold Current by Murotani et al., Electronics Letters, vol. 16, No. 14, Jul. 3rd, 1980, pp. 566-568.
"Mesa-Substrate Buried-Heterostructure GaInAsP/InP Injection Lasers" by Kishino et al., Electronics Letters, vol. 15, No. 4, 2/15/79, pp. 134-136.
"Embedded Epitaxial Growth of Low-Threshold GaInAsP/InP Injection Lasers" By Chen et al., Appl. Phys. Lett., 38 (5), Mar. 1, 1981, pp. 301-303.
"Monolithic Integration of InGaAsP Heterostructure Lasers and Electrooptical Devices" by Wright et al., IEEE Journal of Quantum Electronics, vol. QE-18, No. 2, Feb. 1982, pp. 249-258.
Liau Zong-Long
Walpole James N.
Massachusetts Institute of Technology
Ozaki G.
Reynolds Leo
Smith, Jr. Arthur A.
LandOfFree
GaInAsP/InP Double-heterostructure lasers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with GaInAsP/InP Double-heterostructure lasers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaInAsP/InP Double-heterostructure lasers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1884828