Oscillators – Molecular or particle resonant type
Patent
1979-04-30
1981-09-01
Davie, James W.
Oscillators
Molecular or particle resonant type
357 16, 357 17, H01S 319
Patent
active
042874858
ABSTRACT:
Double-heterostructure (DH) diode lasers based upon very thin epitaxial layers of Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such lasers involves the successive growth, on an InP substrate, of an InP buffer layer, the GaInAsP active layer and an InP top barrier layer using liquid phase epitaxy techniques to grow these layers from supercooled solutions. Stripe geometry lasers can be fabricated from these materials which emit in the 1.1-1.3 .mu.m range and are capable of cw operation for extended periods at room temperature.
REFERENCES:
patent: 3982261 (1976-09-01), Antypas
patent: 3983510 (1976-09-01), Hayashi et al.
T. P. Pearsall et al., "Efficient Lattice-Matched Double-Heterostructure LED's at 1.1 .mu.m from Ga.sub.x I.sub.1-x As.sub.y P.sub.1-y ", Applied Physics Letters, vol. 28, No. 9, 1 May 1976, pp. 499-501.
A. P. Bogatov et al., "Radiative Characteristics of InP-GaInPAs Laser Heterostructures", Sov. Phys. Semicond., vol. 9, No. 10, pp. 1282-1285, Oct. 1975.
J. J. Hsieh, "Thickness and Surface Morphology of GaAs LPE Layers Grown by Supercooling . . . ", J. Cryst. Growth, vol. 27, 1974, pp. 49-61.
M. B. Parish, "Heterostructure Injection Lasers", Proceedings of the IEEE, vol. 64, No. 10, Oct. 1976, FIG. 28 of p. 1528.
K. Oe et al., "GaInAsP-InP Double Heterostructure Lasers Prepared by a New Apparatus", Japan J. Appl. Phys., vol. 15, (1976), No. 10, pp. 2003-2004.
J. J. Hsieh et al., "Room-Temperature cw Operation of GaInAsP/InP Double-Heterostructure Diod Lasers Emitting at 1.1 .mu.m", Applied Physics Letters, vol. 28, No. 12, 15 Jun. 1976, pp. 709-711.
Brook David E.
Davie James W.
Massachusetts Institute of Technology
Smith, Jr. Arthur A.
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