Gain-switched semiconductor light pulse source, and a soliton tr

Details Gain-switched semiconductor light pulse source, and a soliton tr Gain-switched semiconductor light pulse source, and a soliton tr

1994-01-18

1995-07-18

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

359188, 372 26, H01S 318

Patent

active

054348790

ABSTRACT:
An electrical power supply (20, 22) powers a semiconductor laser chip (2) under gain switching conditions so as to make the chip emit light pulses. The light pulses are compressed in a fiber (30) having negative dispersion, so that they constitute solitons. Their spectrum width is decreased by the fact that a gain segment powered by the power supply constitutes only a portion of the length of the resonant cavity of the chip. The invention applies to transmitting data over optical fibers.

REFERENCES:
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patent: 5177758 (1993-01-01), Oka et al.
patent: 5325382 (1994-06-01), Emura et al.
Y. Sakakibara "Single-Mode Oscillation Under High-Speed Direct Modulation in GaInAsP/InP Integrated Twin-Guide Lasers with Distributed Bragg", Electronics Letters, vol. 16, No. 12, Jun. 5, 1980, pp. 456-457.
Japanese Patent Abstract 63-299291 dated Dec. 6, 1988.
D. M. Spirit et al "Nonlinear, dispersion free 10GHz optical pulse train transmission in distributed erbium dopde fibre", Electronics Letters, vol. 27, No. 3, Jan. 31, 1991, pp. 222-224.
J. M. Lourtioz et al "Transform limited gain-switched DFB lasers pulses for long haul soliton trans-transmission", EFOC/LAN 19992, Tenth Annual European Optical Communications and Networks Conference, Jun. 24-26, 1992, pp. 273-275.
French Search Report FR 9300473 dated Oct. 24, 1993.

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