Gain stabilization technique for narrow band integrated low...

Details Gain stabilization technique for narrow band integrated low... Gain stabilization technique for narrow band integrated low...

2005-11-08

2005-11-08

Choe, Henry (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including frequency-responsive means in the signal...

C330S305000

Reexamination Certificate

active

06963247

ABSTRACT:
A resonant load circuit is disposed in an integrated circuit, where the resonant load circuit includes an integrated inductance in parallel with an integrated capacitance, and further includes a first integrated resistance Rsin series with one of the inductance and capacitance, preferably in series with the inductance, and a second integrated resistance Rpin parallel with the inductance and capacitance. The first and second integrated resistances have values selected for reducing an amount of resonant load circuit Q over a plurality of instances of the integrated circuit. In a preferred, but non-limiting, embodiment the resonant load circuit forms a load in an RF low noise amplifier, such as a balanced inductively degenerated common source low noise amplifier (LNA).

REFERENCES:
patent: 3210681 (1965-10-01), Junior
patent: 3482179 (1969-12-01), Lutes, Jr. et al.
patent: 3486126 (1969-12-01), Cadigan et al.
patent: 6259323 (2001-07-01), Salminen
patent: 6614303 (2003-09-01), Nentwig
patent: 6646449 (2003-11-01), Seppinen et al.
patent: 2001/0006900 (2001-07-01), Hanninen
patent: 2003/0176174 (2003-09-01), Seppinen

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