Coherent light generators – Particular active media – Semiconductor
Patent
1994-03-03
1997-01-21
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
H01S 318
Patent
active
055965911
ABSTRACT:
A gain-guided type AlGaInP visible light laser diode in accordance with the present invention has a characteristic in that, an n-type current-blocking layer for the current constriction in the double-heterojunction structure in highly doped with n-type impurity so as to prevent the formation of p-type inversion layer therein. When an n-GaAs current-blocking layer is formed on a p-GaInP etching stopper layer doped with zinc, the n-type impurity concentration of the n-GaAs current blocking layer is selected to be 3.times.10.sup.18 cm.sup.-3 or more to achieve a large kink-light output at a low oscillation threshold current.
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A. Gomyo et al., "Aging Characteristics of A1 GaInP/GaInP Visible-Light Lasers (.lambda..sub.L = 678 nm)," Electronics Letters, vol. 23, No. 2, Jan. 16, 1987, p. 85.
M. Ishikawa et al., "Long-Term Reliability Tests for InGaA1P Visible Laser Diodes," Japanese Journal of Applied Physics, vol. 28, No. 9, Sep. 1989, pp. 1615-1621.
M. Okajima et al., "Transverse-Mode Stabilized GaA1 As Laser With An Embedded Confining Layer on Optical Guide by MOCVD," IEDM Technical Digest, Dec. 5-7, 1983, cover page and pp. 292-295.
Bovernick Rodney B.
McNutt Robert
NEC Corporation
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