Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-02-08
2005-02-08
Harvey, Mingun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S044010, C372S045013, C372S046012, C372S049010, C372S049010, C372S049010, C372S050121, C372S099000, C372S102000
Reexamination Certificate
active
06853661
ABSTRACT:
A low clad layer made of semiconductor of a first conductivity type is formed on a semiconductor substrate. An active layer is formed on the low clad layer. The active layer is constituted by alternately stacking a strained well layer and a barrier layer. A partial or whole thickness of the active layer is periodically removed along a first direction parallel to the surface of the semiconductor substrate to form a diffraction grating. A filler made of semiconductor is embedded in the removed region. Strain of the strained well layer and strain of the filler have the same sign. An upper clad layer is formed on the active layer and filler and made of semiconductor of a second conductivity type. A semiconductor laser device is provided which has a smaller shift of spontaneous emission or PL even if a diffraction grating is formed in an active layer.
REFERENCES:
patent: 5608572 (1997-03-01), Nitta et al.
patent: 6026110 (2000-02-01), Makino
patent: 6614059 (2003-09-01), Tsujimura et al.
Armstrong Kratz Quintos Hanson & Brooks, LLP
Flores-Ruiz Delma R.
Fujitsu Limited
Harvey Mingun Oh
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