Gain-coupled DFB laser diode

Coherent light generators – Particular resonant cavity – Distributed feedback

Reexamination Certificate

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C372S046012

Reexamination Certificate

active

06925103

ABSTRACT:
A gain-coupled DFB laser diode includes a multiple quantum well active layer and a pair of cladding layers sandwiching the multiple quantum well active layer vertically, wherein the multiple quantum well active layer includes a plurality of gain regions aligned in a direction of propagation of a laser beam and repeated periodically, each of the gain regions having a multiple quantum well structure, and a buried layer fills a gap between a pair of adjacent gain regions, wherein the buried layer includes a plurality of high-refractive index layers and a plurality of low-refractive index layers, each of the high-refractive index layers is formed of a first semiconductor material having a first bandgap, while each of the low-refractive index layers is formed of a second semiconductor material having a second, larger bandgap.

REFERENCES:
patent: 6426515 (2002-07-01), Ishikawa et al.
patent: 6452318 (2002-09-01), Makimoto
patent: 6560266 (2003-05-01), Shoji et al.
patent: 6574256 (2003-06-01), Hofstetter et al.
patent: 2003/0094617 (2003-05-01), Sekine

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