Amplifiers – With semiconductor amplifying device – Including differential amplifier
Reexamination Certificate
2006-03-28
2006-03-28
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including differential amplifier
C330S261000
Reexamination Certificate
active
07019591
ABSTRACT:
A biasing scheme for a MOSFET that mitigates the MOSFET body effect. The biasing scheme can be realized replicating the voltage at the source terminal of a MOSFET and applying this replicated voltage to the body terminal. In this manner, the effect of the body transconductance, at high frequencies, becomes a function of the ratio of the well-to-substrate capacitance of the MOSFET to the sum of the well-to-substrate capacitance and the source-to-body capacitance of the transistor. At high frequencies, the biasing scheme mitigates the reduction in gain of a source follower caused by the body effect of a driven MOSFET within the source follower, improves the stability of a feedback network established by a gain boosting amplifier and the driven MOSFET by contributing a negative half plane zero to the transfer function of the feedback network, and reduces the power consumed by the gain boosting amplifier.
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Broadcom Corporation
Choe Henry
Sterne Kessler Goldstein & Fox P.L.L.C.
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